www.DataSheet4U.com BDW24, BDW24A, BDW24B, BDW24C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW23, BDW23A, BDW23B and BDW23C ● 50 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● Minimum hFE of 750 at 2 A, 3 V TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAC.
y to 150°C free air temperature at the rate of 16 mW/°C. SYMBOL VCBO VCEO VEBO IC IB Ptot Ptot Tj Tstg TA VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -6 -0.2 50 2 -65 to +150 -65 to +150 -65 to +150 UNIT V V V A A W W °C °C °C PRODUCT INFORMATION MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 DataSheet4 U .com www.DataSheet4U.com BDW24, BDW24A, BDW24B, BDW24C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX Collector-emitter V(BR)CEO breakdown vo.
BDW24/A/B/C BDW24/A/B/C Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW23, BDW2.
·Collector Current -IC= -6A ·High DC Current Gain-hFE= 750(Min)@ IC= -2A ·Complement to Type BDW23/A/B/C ·Minimum Lot-to.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BDW24 |
Fairchild Semiconductor |
Hammer Drivers/ Audio Amplifiers | |
2 | BDW24 |
INCHANGE |
PNP Transistor | |
3 | BDW24 |
Bourns Electronic Solutions |
PNP Transistor | |
4 | BDW24B |
Fairchild Semiconductor |
Hammer Drivers/ Audio Amplifiers | |
5 | BDW24B |
Bourns |
PNP Transistor | |
6 | BDW24B |
INCHANGE |
PNP Transistor | |
7 | BDW24c |
Fairchild Semiconductor |
Hammer Drivers/ Audio Amplifiers | |
8 | BDW24C |
INCHANGE |
PNP Transistor | |
9 | BDW24C |
Bourns |
PNP Transistor | |
10 | BDW21 |
Seme LAB |
Bipolar NPN Device | |
11 | BDW21 |
INCHANGE |
NPN Transistor | |
12 | BDW21C |
Seme LAB |
Bipolar NPN Device |