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·DC Current Gain -hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C ·Complement to Type BDT63/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier output stages , gener.
TERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-c Thermal Resistance,Junction to Ambient isc website：www.iscsemi.com MAX UNIT 1.39 ℃/W 70 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT62 V(BR)CEO Collector-Emitter Breakdown Voltage BDT62A BDT62B IC= -30mA; IB= 0 BDT62C VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -8A; IB= -80mA VBE(on) ICB.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BDT62 |
INCHANGE |
Silicon PNP Darlington Power Transistors |
|
| 2 | BDT62 |
MAGNA TEC |
Silicon Darlington Power Transistors |
|
| 3 | BDT62A |
INCHANGE |
Silicon PNP Darlington Power Transistors |
|
| 4 | BDT62A |
MAGNA TEC |
Silicon Darlington Power Transistors |
|
| 5 | BDT62C |
INCHANGE |
Silicon PNP Darlington Power Transistors |
|
| 6 | BDT62C |
MAGNA TEC |
Silicon Darlington Power Transistors |
|
| 7 | BDT62F |
INCHANGE |
PNP Transistor |
|
| 8 | BDT60 |
Power Innovations Limited |
PNP Transistor |
|
| 9 | BDT60 |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 10 | BDT60 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 11 | BDT60A |
Power Innovations Limited |
PNP Transistor |
|
| 12 | BDT60A |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
