BDS20 BDS20SMD BDS21 BDS21SMD MECHANICAL DATA Dimensions in mm 1 0.6 0.8 4.6 16.5 3.6 Dia. 1 3 .5 1 0 .6 SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES FEATURES 1 23 1 3 .7 0 • HERMETIC METAL OR CERAMIC PACKAGES • HIGH RELIABILITY 1.0 2 .5 4 BSC 2. 70 BSC • MILITARY AND SPACE OPTIONS • SCREENING TO CECC LEVELS 3 .6 0.
1 23
1 3 .7 0
• HERMETIC METAL OR CERAMIC PACKAGES
• HIGH RELIABILITY
1.0 2 .5 4 BSC 2. 70 BSC
• MILITARY AND SPACE OPTIONS
• SCREENING TO CECC LEVELS
3 .6 0 (0 .1 4 2 ) M a x .
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 )
• FULLY ISOLATED (METAL VERSION)
1
3
0 .7 6 (0 .0 3 0 ) m in .
APPLICATIONS
1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 )
1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
• POWER LINEAR AND SWITCHING APPLICATIONS
• GENERAL PURPOSE POWER
2
9 .6 9 .3 1 1 .5 1 1 .2
7 (0 8 (0 8 (0 8.
SILICON EPIBASE NPN DARLINGTON TRANSISTOR BDS20 • High DC Current Gain • Hermetic Metal TO-220 Package • Designed For G.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BDS20SMD |
Seme LAB |
Silicon PNP Transistor | |
2 | BDS21 |
Seme LAB |
Silicon PNP Transistor | |
3 | BDS21 |
TT |
SILICON EPIBASE PNP DARLINGTON TRANSISTOR | |
4 | BDS21SMD |
Seme LAB |
Silicon PNP Transistor | |
5 | BDS10 |
Seme LAB |
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES | |
6 | BDS101 |
First Silicon |
SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER | |
7 | BDS102 |
First Silicon |
SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER | |
8 | BDS103 |
First Silicon |
SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER | |
9 | BDS104 |
First Silicon |
SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER | |
10 | BDS105 |
First Silicon |
SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER | |
11 | BDS106 |
First Silicon |
SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER | |
12 | BDS107 |
First Silicon |
SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER |