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BDS18 BDS18SMD BDS19 BDS19SMD MECHANICAL DATA Dimensions in mm 1 0.6 0.8 4.6 16.5 3.6 Dia. 1 3 .5 1 0 .6 SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES FEATURES 1 23 1 3 .7 0 • HERMETIC METAL OR CERAMIC PACKAGES 1.0 2 .5 4 BSC 2. 70 BSC • HIGH RELIABILITY • MILITARY AND SPACE OPTIONS • SCREENING TO CECC LEVELS 0 .8 .
1 23
1 3 .7 0
• HERMETIC METAL OR CERAMIC PACKAGES
1.0 2 .5 4 BSC 2. 70 BSC
• HIGH RELIABILITY
• MILITARY AND SPACE OPTIONS
• SCREENING TO CECC LEVELS
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 )
3 .6 0 (0 .1 4 2 ) M a x .
• FULLY ISOLATED (METAL VERSION)
1
3
0 .7 6 (0 .0 3 0 ) m in .
1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 )
APPLICATIONS
• POWER LINEAR AND SWITCHING APPLICATIONS
• GENERAL PURPOSE POWER
1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
2
9 .6 9 .3 1 1 .5 1 1 .2
7 (0 8 (0 8 (0 .
BDS19 - Inchange Semiconductor
·High Voltage: VCEV= -150V(Min) ·Low Saturation Voltage- : VCE(sat)= -1.5V(Max)@ IC= -4A ·High Reliablity ·Minimum Lot-t.
BDS19 - TT
SILICON PLANAR EPITAXIAL PNP TRANSISTOR BDS19 • High Voltage • Hermetic TO220 Isolated Metal Package • Ideally suited f.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BDS10 |
Seme LAB |
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
|
| 2 | BDS101 |
First Silicon |
SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER |
|
| 3 | BDS102 |
First Silicon |
SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER |
|
| 4 | BDS103 |
First Silicon |
SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER |
|
| 5 | BDS104 |
First Silicon |
SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER |
|
| 6 | BDS105 |
First Silicon |
SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER |
|
| 7 | BDS106 |
First Silicon |
SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER |
|
| 8 | BDS107 |
First Silicon |
SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER |
|
| 9 | BDS10IG |
Seme LAB |
SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE |
|
| 10 | BDS10SMD |
Seme LAB |
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
|
| 11 | BDS10SMD05 |
Seme LAB |
SILICON NPN |
|
| 12 | BDS11 |
Seme LAB |
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
|