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·Low Collector Saturation Voltage ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Developed for power liner and switching -Gener purpose power . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 .
- Emitter voltage
Ic=
–0.5A ;Vce=
–2V
ICBO
Collector Cutoff Current
VCB= -120V ; IE=0
ICEO
Collector Cutoff Current
VCE= -60V ; IB=0
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
hFE
DC Current Gain
fT
Transition frequency
Switching times
IC= -4A ; VCE= -2V
Ic=
–0.5A Vce=
–4V F = 20MHz
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -2.0A , IB1= -IB2= -0.2A,VCC≈-80V
BDS18
MIN MAX UNIT
-120
V
-0.4
V
-1.0
V
-20
μA
0.1
mA
-10
μA
40
250
30
MHZ
0.5
μs
1.5
μs
0.3
μs
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet a.
BDS18 - Seme LAB
BDS18 BDS18SMD BDS19 BDS19SMD MECHANICAL DATA Dimensions in mm 1 0.6 0.8 4.6 16.5 3.6 Dia. 1 3 .5 1 0 .6 SILICON PNP.
BDS18 - TT
SILICON PLANAR EPITAXIAL PNP TRANSISTOR BDS18 • High Voltage • Hermetic TO220 Isolated Metal Package • Ideally suited f.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BDS10 |
Seme LAB |
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
|
| 2 | BDS101 |
First Silicon |
SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER |
|
| 3 | BDS102 |
First Silicon |
SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER |
|
| 4 | BDS103 |
First Silicon |
SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER |
|
| 5 | BDS104 |
First Silicon |
SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER |
|
| 6 | BDS105 |
First Silicon |
SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER |
|
| 7 | BDS106 |
First Silicon |
SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER |
|
| 8 | BDS107 |
First Silicon |
SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER |
|
| 9 | BDS10IG |
Seme LAB |
SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE |
|
| 10 | BDS10SMD |
Seme LAB |
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
|
| 11 | BDS10SMD05 |
Seme LAB |
SILICON NPN |
|
| 12 | BDS11 |
Seme LAB |
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
|