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BDS16 - Seme LAB

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BDS16 NPN Transistor

BDS16 BDS16SMD BDS17 BDS17SMD MECHANICAL DATA Dimensions in mm 1 0.6 0.8 4.6 16.5 3.6 Dia. 1 3 .5 1 0 .6 SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES FEATURES 1 23 1 3 .7 0 1.0 2 .5 4 BSC 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (.

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1 23 1 3 .7 0 1.0 2 .5 4 BSC 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 2. 70 BSC




• HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVELS FULLY ISOLATED (METAL VERSION) 3 .6 0 (0 .1 4 2 ) M a x . 1 3 0 .7 6 (0 .0 3 0 ) m in . APPLICATIONS 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2
• POWER LINEAR AND SWITCHING APPLICATIONS
• GENERAL PURPOSE POWER 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 .

The same part from a different manufacturer

Datasheet BDS16 - Inchange Semiconductor BDS16

·High Voltage: VCEV= 120V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 4A ·High Reliablity ·Minimum Lot-to-L.

Datasheet BDS16 - TT BDS16

SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16 / BDS17 • High Voltage • Hermetic TO220M (T0-257AB) Isolated Metal Packag.

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