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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 500mA ·Complement to Type BD956 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Col.
ARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 4V ICBO Collector Cutoff Current ICEO Collector Cutoff Current VCB= 120V; IE= 0 VCB= 60V; IE= 0,TJ=150℃ VCE= 60V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 500mA ; VCE= 4V hFE-2 DC Cur.
BD955 - CDIL
Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package IS/ISO 9002 Lic#.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BD950 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 2 | BD950 |
CDIL |
PNP PLASTIC POWER TRANSISTOR |
|
| 3 | BD950F |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 4 | BD951 |
CDIL |
NPN PLASTIC POWER TRANSISTOR |
|
| 5 | BD951 |
INCHANGE |
NPN Transistor |
|
| 6 | BD951F |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 7 | BD952 |
CDIL |
PNP PLASTIC POWER TRANSISTOR |
|
| 8 | BD952 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 9 | BD95242MUV |
Rohm |
2ch Switching Regulator |
|
| 10 | BD9524MUV |
Rohm |
Main Power Supply IC |
|
| 11 | BD9526AMUV |
Rohm |
Silicon Monolithic Integrated Circuit |
|
| 12 | BD9528AMUV |
Rohm |
PCs Main Power Supply |
|