·DC Current Gain- : hFE= 40(Min)@ IC= 500mA ·Complement to Type BD950F/952F/954F/956F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD949F 60 BD951F 80 VCBO Collector-Base Voltage.
/951F/953F/955F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD949F VCEO(SUS) Collector-Emitter Sustaining Voltage BD951F BD953F IC= 30mA ; IB= 0 BD955F VCE(sat) VBE(on) ICBO ICEO Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current IC= 2A; VCE= 4V VCB= VCBOmax; IE= 0 VCB= 1/2VCBOmax; IE= 0,TJ=150℃ VCE= VCEOmax; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 500mA ; VCE= 4V hFE-2 DC Current Gain IC= 2A ; VCE= 4V fT Current-G.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BD953 |
CDIL |
NPN PLASTIC POWER TRANSISTOR | |
2 | BD953 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | BD953 |
INCHANGE |
NPN Transistor | |
4 | BD9532EKN |
Rohm |
Step down DC/DC converter Controller | |
5 | BD9533EKN |
Rohm |
Step down DC/DC converter Controller | |
6 | BD9535MUV |
Rohm |
Switching Regulator | |
7 | BD9536FV |
Rohm |
2ch Switching Regulator | |
8 | BD950 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
9 | BD950 |
CDIL |
PNP PLASTIC POWER TRANSISTOR | |
10 | BD950F |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
11 | BD951 |
CDIL |
NPN PLASTIC POWER TRANSISTOR | |
12 | BD951 |
INCHANGE |
NPN Transistor |