BD810 - ON Semiconductor

BD810 Plastic High Power Silicon Transistors

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistors These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base .

Features

• High DC Current Gain
• These Devices are Pb−Free and are RoHS Compliant
* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VCEO VCBO VEBO IC IB PD 80 80 5.0 10 6.0 90 0.72 Vdc Vdc Vdc Adc Adc W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, d.