·With TO-220C package www.datasheet4u.com ·Complement to type BD707/709/711 APPLICATIONS ·Intented for use in power linear and switching applications. PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION BD708 BD710 BD712 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER BD708 VCBO Collector-base voltage BD710 BD712 BD708 VCEO Co.
www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER BD708 CONDITIONS MIN -60 IC=-0.1A, IB=0 -80 -100 IC=-4A ,IB=-0.4A IC=-4A , VCE=-4V BD708 VCB=-60V, IE=0 TC=150 VCB=-80V, IE=0 TC=150 VCB=-100V, IE=0 TC=150 VCE=-30V, IB=0 VCE=-40V, IB=0 VCE=-50V, IB=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-2V IC=-2A ; VCE=-2V IC=-4A ; VCE=-4V BD708 40 30 15 5 IC=-10A ; VCE=-4V 10 8 8 IC=-0.3A;VCE=-3V; 3 MHz 150 120 -1.0 400 mA -0.1 mA -1.0 -1.5 -0.1 -1.0 -0.1 -1.0 -0.1 -1.0 mA V V V TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage BD710 BD712 VCEsat VBE Collector-emitter saturati.
·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80V(Min.) ·Complemen.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BD711 |
STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS | |
2 | BD711 |
SavantIC |
(BD707 - BD711) SILICON POWER TRANSISTOR | |
3 | BD711 |
INCHANGE |
NPN Transistor | |
4 | BD712 |
STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS | |
5 | BD712 |
SavantIC |
(BD708 - BD712) SILICON POWER TRANSISTOR | |
6 | BD712 |
INCHANGE |
PNP Transistor | |
7 | BD71801GWL |
ROHM |
Power Management LSI | |
8 | BD71805MWV |
ROHM |
System PMIC | |
9 | BD71815AGW |
ROHM |
System PMIC | |
10 | BD71837AMWV |
ROHM |
Power Management | |
11 | BD71837MWV |
ROHM |
Power Management | |
12 | BD71847AMWV |
ROHM |
Power Management |