·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD652F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Coll.
mi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD651F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 140 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 50mA 3.0 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 3V 2.5 V ICBO Collector Cutoff Current VCB= 1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BD651 |
Bourns Electronic Solutions |
NPN SILICON POWER DARLINGTONS | |
2 | BD651 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | BD651 |
Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS | |
4 | BD651 |
INCHANGE |
NPN Transistor | |
5 | BD6510F |
Rohm |
High-Side Switch | |
6 | BD6512F |
Rohm |
High-Side Switch | |
7 | BD6513F |
Rohm |
High-Side Switch | |
8 | BD6516F |
Rohm |
High-Side Switch | |
9 | BD6517F |
Rohm |
High-Side Switch | |
10 | BD6519FJ |
Rohm |
High-Side Switch | |
11 | BD650 |
Bourns Electronic Solutions |
PNP SILICON POWER DARLINGTONS | |
12 | BD650 |
SavantIC |
SILICON POWER TRANSISTOR |