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·Collector Current -IC= 15A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min)- BD545; 60V(Min)- BD545A 80V(Min)- BD545B; 100V(Min)- BD545C ·Complement to Type BD546/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications A.
Rth j-c Thermal Resistance,Junction to Ambient 35.7 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD545/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD545 40 V(BR)CEO Collector-Emitter Breakdown Voltage BD545A BD545B IC= 30mA ;IB=0 60 80 V BD545C 100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.625A 0.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2A 1.0 V VBE(on) Base-Emitter On Voltage IC= 10A; VCE= 4V 1.
BD545C - Bourns
www.DataSheet4U.com BD545, BD545A, BD545B, BD545C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BD545 |
Bourns Electronic Solutions |
NPN SILICON POWER TRANSISTORS |
|
| 2 | BD545 |
INCHANGE |
NPN Transistor |
|
| 3 | BD5451EFV |
Rohm |
Class-D Speaker Amplifier |
|
| 4 | BD5452AMUV |
ROHM |
Class D Speaker Amplifier |
|
| 5 | BD545A |
INCHANGE |
NPN Transistor |
|
| 6 | BD545A |
Bourns |
NPN SILICON POWER TRANSISTORS |
|
| 7 | BD545B |
INCHANGE |
NPN Transistor |
|
| 8 | BD545B |
Bourns |
NPN SILICON POWER TRANSISTORS |
|
| 9 | BD545S |
Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
|
| 10 | BD545T |
Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
|
| 11 | BD545YS |
Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
|
| 12 | BD545YT |
Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
|