BD501 - INCHANGE

BD501 Silicon NPN Power Transistors

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 50V(Min) 80V(Min) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE U.

Features

se specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD501 BD501B IC= 30mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage BD501 IC= 5A; IB= 0.5A BD501B IC= 3.5A; IB= 0.35A VBE(on) BD501 Base-Emitter On Voltage BD501B IC= 5A; VCE= 4V IC= 3.5A; VCE= 4V ICBO Collector Cutoff Current VCB= 55V;IE= 0 VCB= 85V;IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain BD501 BD501B IC= 5A; VCE= 4V IC= 3.5A; VCE= 4V fT Current-Gain—Bandwidth Product IC= 1.0A ; VCE= 10V BD501/B MIN TYP. MAX UNIT 50 V 80 1.0 V 1.6 V 1.0 mA.