BD380 - Fairchild Semiconductor

BD380 PNP Epitaxial Silicon Transistor

BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications • Complement to BD375, BD377 and BD379 respectively PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD376 : BD378 : BD380 1 TO-126 2.Collector 3.Base 1. Emitter Value - 50 - 75 - 100 - 45 - 6.

Features

-2 -2 -2 - 100 40 20 375 -1 - 1.5 50 500 V V ns ns Typ. Max. Units V V V V V V µA µA µA µA BVCBO IC = - 100µA, IE = 0 ICBO VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 0.15A VCE = - 2V, IC = - 1A IC = - 1A, IB = - 0.1A VCE = - 2V, IC = -1A VCC = - 30V, IC = - 0.5A IB1 = - IB2 = - 0.05A RL = 60Ω IEBO hFE1 hFE2 VCE(sat) VBE(on) tON tOFF Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter ON Voltage Turn ON Time Turn OFF Time
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed hFE Classificntion Classif.