BD375 - Fairchild Semiconductor

BD375 NPN Epitaxial Silicon Transistor

BD375/377/379 BD375/377/379 Medium Power Linear and Switching Applications • Complement to BD376, BD378 and BD380 respectively NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD375 : BD377 : BD379 1 TO-126 2.Collector 3.Base 1. Emitter Value 50 75 100 45 60 80 5 2 3.

Features

500 V V ns ns Typ. Max. Units V V V V V V µA µA µA µA BVCBO IC = 100µA, IE = 0 ICBO VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 0.15A VCE = 2V, IC = 1A IC = 1A, IB = 0.1A VCE = 2V, IC = 1A VCC = 30V, IC = 0.5A IB1 = - IB2 = 0.05A RL = 60Ω IEBO hFE1 hFE2 VCE(sat) VBE(on) tON tOFF Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage Turn ON Time Turn OFF Time
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed hFE Classification Classification hFE1 ©2000 Fairchild Semiconductor International 6 40 ~ .