BD343 - INCHANGE

BD343 PNP Transistor

·Excellent Safe Operating Area ·High DC Current Gain- : hFE=15-100(Min)@IC= -8A ·Low Saturation Voltage- : VCE(sat)= -1.0V(Max)@ IC = -8.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE U.

Features

43 CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 -40 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A -1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -12A; IB= -2A -2.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -8A; IB= -0.8A -2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -12A; IB= -2A -3.0 V ICEO Collector Cutoff Current VCE= -40V; IB= 0 -0.5 mA ICBO Collector Cutoff Current VCB= -40V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -5.0V; IC= 0 -0.1 mA hFE-1 DC Current Gain .