BD333 - INCHANGE

BD333 NPN Transistor

·High DC Current Gain ·Complement to type BD334 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCE.

Features

NGE Semiconductor BD333 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= 3A; VCE= 3V VCB= 60V; IE= 0 VCB= 60V; IE= 0,TC=150℃ VEB= 5V; IC= 0 hFE-1
* DC Current Gain IC= 0.5A; VCE= 3V hFE-2
* DC Current Gain IC= 3A; VCE=3V hFE-3
* DC Current Gain IC= 6A; VCE= 3V
*:Measured under pulse conditions:tp<300us,σ<2% MIN TYP. MA.