BD224 - INCHANGE

BD224 PNP Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain -hFE =30(Min)@ IC= -0.3A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta.

Features

ETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -1A VBE(on) Base-Emitter On Voltage IC= -4A ; VCE= -4V ICBO Collector Cutoff Current VCB= -60V ; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.3A ; VCE= -4V hFE-2 DC Current Gain IC= -4A ; VCE= -4V fT Current-Gain—Bandwidth Product IC=-1A ; VCE= -5V MIN TYP. MAX UNIT -40 V -1.0 V -1.5 V -100 μA -100 μA 30 120 15 3 MHz NOTICE： ISC reserves the rights to make changes of the content herein the.