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Plastic Medium-Power Silicon NPN Transistors BD135G, BD137G, BD139G This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • High DC Current Gain • BD 135, 137, 139 are complementary with BD 136, 138, 140 • These Devices are Pb−Free, .
• High DC Current Gain
• BD 135, 137, 139 are complementary with BD 136, 138, 140
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage BD135G BD137G BD139G
VCEO
Vdc
45
60
80
Collector−Base Voltage BD135G BD137G BD139G
VCBO
Vdc
45
60
100
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ TA = 25°C Derate above 25°C
VEBO IC IB PD
5.0
Vdc
1.5
Adc
0.5
Adc
1.25
Watts
10
mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
12.5
Watts
100
m.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BD137 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 2 | BD137 |
Toshiba |
Silicon NPN Transistor |
|
| 3 | BD137 |
INCHANGE |
NPN Transistor |
|
| 4 | BD137 |
Unisonic Technologies |
NPN POWER TRANSISTORS |
|
| 5 | BD137 |
Central Semiconductor |
NPN SILICON TRANSISTOR |
|
| 6 | BD137 |
ON Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 7 | BD137-10 |
ON Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 8 | BD137-16 |
ON Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 9 | BD137-16 |
ON Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 10 | BD13710STU |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 11 | BD13716S |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 12 | BD13716STU |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|