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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCX70GLT1/D General Purpose Transistors NPN Silicon COLLECTOR 3 1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC Value 45 45 5.0 200 Unit Vdc Vdc Vdc mAdc BCX70GLT1 BCX70JLT1 BCX70KLT1 3 1 2 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector C.
ACTERISTICS
Collector
– Emitter Breakdown Voltage (IC = 2.0 mAdc, IE= 0) Emitter
– Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 32 Vdc) (VCE = 32 Vdc, TA = 150°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. FR
– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)EBO ICES — — IEBO — 20 20 20 nAdc mAdc nAdc 45 5.0 — — Vdc Vdc
0.062 in. 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Motorola Small
–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996
1
BCX70GLT1 BCX70JLT1 BCX70KLT1
ELECTRICAL CHARACTE.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BCX70J |
Samsung semiconductor |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 2 | BCX70J |
Fairchild Semiconductor |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 3 | BCX70J |
NXP |
NPN general purpose transistors |
|
| 4 | BCX70J |
Siemens Semiconductor Group |
NPN Silicon AF Transistors |
|
| 5 | BCX70J |
General Semiconductor |
Small Signal Transistor |
|
| 6 | BCX70J |
Infineon Technologies AG |
NPN Silicon AF Transistors |
|
| 7 | BCX70J |
Kexin |
NPN Transistors |
|
| 8 | BCX70J |
MCC |
NPN Transistor |
|
| 9 | BCX70J |
Motorola |
Transistor |
|
| 10 | BCX70J |
Zetex Semiconductors |
NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR |
|
| 11 | BCX70J |
Central Semiconductor |
SILICON NPN TRANSISTORS |
|
| 12 | BCX70J |
SeCoS |
NPN Silicon Plastic-Encapsulate Transistor |
|
