BCW70LT1 - Motorola Inc

BCW70LT1 General Purpose Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCW69LT1/D General Purpose Transistors PNP Silicon COLLECTOR 3 1 BASE BCW69LT1 BCW70LT1 3 1 2 EMITTER 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VEBO IC Value –45 –5.0 –100 Unit Vdc Vdc mAdc CASE 318 – 08, STYLE 6 SOT– .

Features

B = 0) Collector
  –Emitter Breakdown Voltage (IC =
  –100 µAdc, VEB = 0) Emitter
  –Base Breakdown Voltage (IE =
  –10 µAdc, IC = 0) Collector Cutoff Current (VCB =
  –20 Vdc, IE = 0) (VCB =
  –20 Vdc, IE = 0, TA = 100°C) 1. FR
  –5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR)CEO V(BR)CES V(BR)EBO ICBO — —
  –100
  –10 nAdc µAdc
  –45
  –50
  –5.0 — — — Vdc Vdc Vdc Thermal Clad is a trademark of the Bergquist Company Motorola Small
  –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BCW69LT1 BCW70LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted).