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PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BCV29 2. Features and benefits • Very high DC current gain (min. 20000) • High current (max. 500 mA) • Low voltage (max. 30 V) • AEC-Q101 qualified 3. Applications • Applications, where very high amplification is required 4. Quick reference.
• Very high DC current gain (min. 20000)
• High current (max. 500 mA)
• Low voltage (max. 30 V)
• AEC-Q101 qualified
3. Applications
• Applications, where very high amplification is required
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
IC
collector current
hFE
DC current gain
Conditions VCE = -5 V; IC = -1 mA; Tamb = 25 °C
Min Typ Max Unit
-
-
-500 mA
4000 -
-
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
E
emitter
2
C
collector
3
B
base
Simplified outline
321
SOT89
Graphic symbol
B
C
TR1 TR2
E sym088
.
BCV28 - Infineon Technologies AG
PNP Silicon Darlington Transistors • For general AF applications • High collector current • High current gain • Compleme.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BCV26 |
NXP |
PNP Darlington transistors |
|
| 2 | BCV26 |
Fairchild Semiconductor |
PNP Darlington Transistor |
|
| 3 | BCV26 |
Infineon Technologies AG |
PNP Silicon Darlington Transistors |
|
| 4 | BCV26 |
SEMTECH |
PNP Darlington Transistors |
|
| 5 | BCV27 |
NXP |
NPN Darlington transistors |
|
| 6 | BCV27 |
Fairchild Semiconductor |
NPN Darlington Transistor |
|
| 7 | BCV27 |
Infineon Technologies AG |
NPN Silicon Darlington Transistors |
|
| 8 | BCV27 |
JCST |
NPN Transistor |
|
| 9 | BCV27 |
SEMTECH |
NPN Darlington Transistors |
|
| 10 | BCV27 |
SeCoS |
NPN Darlington Plastic Encapsulated Transistor |
|
| 11 | BCV29 |
NXP |
NPN Darlington transistors |
|
| 12 | BCV29 |
Infineon Technologies AG |
NPN Silicon Darlington Transistors |
|