BCU81-SMD - Seme LAB

BCU81-SMD NPN EPITAXIAL PLANAR SILICON TRANSISTOR

BCU81-SMD MECHANICAL DATA Dimensions in mm 4 .5 1 .6 1 .5 NPN EPITAXIAL PLANAR SILICON TRANSISTOR Ideal for high current driver applications requiring low loss devices 4 .2 5 m a x . 2 .5 FEATURES • LOW VCE(SAT) • HIGH CURRENT • HIGH ENERGY RATING 0 .4 0 0 .5 0 1 .5 3 .0 1 .0 0 .4 0 APPLICATIONS + * • ANY HIGH CURRENT DRIVER APPLICATIONS REQUIRING EF.

Features

• LOW VCE(SAT)
• HIGH CURRENT
• HIGH ENERGY RATING 0 .4 0 0 .5 0 1 .5 3 .0 1 .0 0 .4 0 APPLICATIONS +
*
• ANY HIGH CURRENT DRIVER APPLICATIONS REQUIRING EFFICIENT LOW LOSS DEVICES SOT89 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICP PC Tj Tstg Collector
  – Base voltage Collector
  – Emitter voltage (IB = 0) Emitter
  – Base voltage Collector current Collector Current (Pulse) Collector Dissipation (Mounted on Ceramic Board (250mm2 x 0.8mm) Junction Temperature Storage Temperature 30V 10V 6V 3A 5A 500mW 1.3W 150°C
  –55 to 150°C Magnatec. Telephone +44(0)1.