BCR3KM-14 - Mitsubishi Electric Semiconductor

BCR3KM-14 TRIAC

MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR3KM-14 LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR3KM-14 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 E 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 ŒŽ 2.6 ± 0.2 V Measurement point of case tempe.

Features

ve peak off-state voltageV 1 Voltage class 14 700 840 Unit V V Non-repetitive peak off-state voltageV1 Symbol I T (RMS) I TSM I 2t PGM PG (AV) VGM I GM Tj T stg — Viso Parameter RMS on-state current Surge on-state current I 2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Typical value Conditions Commercial frequency, sine full wave 360 ° conduction, Tc=108°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, sur.