BCR141L3 - Infineon Technologies AG

BCR141L3 NPN Silicon Digital Transistor

BCR141.../SEMH1 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR141/F/L3 BCR141T/W C 3 BCR141S/U SEMH1 C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07.

Features

BCR141T, TS ≤ 109°C BCR141U, TS ≤ 118°C BCR141W, TS ≤ 124°C SEMH1, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR141 BCR141F BCR141L3 BCR141S BCR141T BCR141U BCR141W SEMH1 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 10 30 100 200 250 250 250 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 133 ≤ 105 ≤ 300 °C Unit K/W 2 Jun-14-2004 BCR141.../SEMH1 Electrical Characteristics at TA = 2.