BCR 108W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) Type BCR 108W Marking Ordering Code WHs Q62702-C2275 Pin Configuration 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on V.
-base breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 164 70 V 0.3 0.8 1.1 2.9 0.052 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.4 VEB = 5 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 5 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage Vi(on) 0.5 IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio R1 R1/R2 1.5 0.042 AC Characteristics Transition frequency fT 170 2 - MHz pF - IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BCR108 |
Siemens Semiconductor Group |
NPN Silicon Digital Transistor | |
2 | BCR108 |
Infineon Technologies AG |
NPN Silicon Digital Transistor | |
3 | BCR108F |
Infineon Technologies AG |
NPN Silicon Digital Transistor | |
4 | BCR108L3 |
Infineon Technologies AG |
NPN Silicon Digital Transistor | |
5 | BCR108S |
Siemens Semiconductor Group |
NPN Silicon Digital Transistor | |
6 | BCR108S |
Infineon Technologies AG |
NPN Silicon Digital Transistor | |
7 | BCR108T |
Infineon Technologies AG |
NPN Silicon Digital Transistor | |
8 | BCR100 |
BWTEK |
Raman Cuvette Holder | |
9 | BCR100 |
Bartco |
remote driver LED fixture | |
10 | BCR1002A3 |
CYStech Electronics |
PNPN SCR | |
11 | BCR1002N3 |
CYStech Electronics |
PNPN SCR | |
12 | BCR1003A3 |
CYStech Electronics |
PNPN SCR |