BCR101T - Infineon Technologies AG

BCR101T NPN Silicon Digital Transistor

BCR101... NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 100kΩ , R2 = 100kΩ ) BCR101F/L3 BCR101T C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration Package BCR101F* BCR101L3* BCR101T* *Preliminary Maximum Ratings Parameter UCs UC UCs 1=B 1=B 1=B 2=E 2=E 2=E 3=.

Features

min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 50 70 0.5 1 70 0.9 - 100 1 100 3 100 75 0.3 1.8 3 130 1.1 kΩ Collector-base cutoff current VCB = 40 V, IE = 0 nA µA V Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain2) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage2) IC = 5 mA, IB = 0.25 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 1 mA, VCE = 0.3 V Input resistor Resistor .