BCP5616Q - Diodes

BCP5616Q NPN Transistor

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features  BVCEO > 80V  IC = 1A High Continuous Collector Current  ICM = 2A Peak Pulse Current  2W Power Dissipation  Low Saturation Voltage VCE(sat) < 500mV @ 0.5A  Complementary PNP Type: BCP5316Q  Totally Lead-Free & Fully RoHS Compliant.

Features

 BVCEO > 80V
 IC = 1A High Continuous Collector Current
 ICM = 2A Peak Pulse Current
 2W Power Dissipation
 Low Saturation Voltage VCE(sat) < 500mV @ 0.5A
 Complementary PNP Type: BCP5316Q
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability
 PPAP Capable (Note 4) BCP5616Q 80V NPN MEDIUM POWER TRANSISTOR IN SOT223 Applications
 Medium Power Switching or Amplification Applications
 AF Driver and Output Stages Mechanical Data
 Case: SOT223
 Case Material: Molded Plastic. “G.