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BCP54...BCP56 NPN Silicon AF Transistors For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP51 ... BCP53 (PNP) 4 3 2 1 VPS05163 Type BCP54 BCP54-10 BCP54-16 BCP55 BCP55-10 BCP55-16 BCP56 BCP56-10 BCP56-16 Marking BCP 54 1=B BCP 54-10 1 = B BCP 54-16 1 = B BCP 55 1=B BCP 55-10 1.
erature Storage temperature IC ICM IB IBM Ptot Tj Tstg 1 1.5 100 200 1.5 150 -65 ... 150 A mA W °C Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Nov-29-2001 BCP54...BCP56 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 V(BR)CEO typ. max. Unit V 45 60 80 100 20 nA µA - BCP54 BCP55 BCP56 Collector-base breakdown voltage IC = 100 µA, IE = 0 V(BR)CBO BCP54 BCP55 B.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BCP54-10T |
nexperia |
1A NPN medium power transistors |
|
| 2 | BCP54-16 |
NXP |
NPN medium power transistors |
|
| 3 | BCP54-16 |
Infineon Technologies AG |
NPN Silicon AF Transistors |
|
| 4 | BCP54-16T |
nexperia |
1A NPN medium power transistors |
|
| 5 | BCP54 |
NXP |
NPN medium power transistors |
|
| 6 | BCP54 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 7 | BCP54 |
Infineon Technologies AG |
NPN Silicon AF Transistors |
|
| 8 | BCP54 |
nexperia |
1A NPN medium power transistors |
|
| 9 | BCP54 |
Diodes |
NPN MEDIUM POWER TRANSISTORS |
|
| 10 | BCP5401 |
SeCoS |
PNP Transistor |
|
| 11 | BCP54T |
nexperia |
1A NPN medium power transistors |
|
| 12 | BCP51 |
NXP |
PNP medium power transistors |
|