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www.DataSheet4U.com BCP51...BCP53 PNP Silicon AF Transistors For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP54...BCP56 (NPN) 4 3 2 1 VPS05163 Type BCP51 BCP51-10 BCP51-16 BCP52 BCP52-10 BCP52-16 BCP53 BCP53-10 BCP53-16 Marking BCP 51 1=B BCP 51-10 1 = B BCP 51-16 1 = B BCP.
24 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg 1 1.5 100 200 1.5 150 -65 ... 150 A mA W °C Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Nov-29-2001 BCP51...BCP53 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 V(BR)CEO typ. max. Unit V 45 60 80 100 20 nA µA - BCP51 BCP52 BCP53 Collector-base breakdown voltage IC = 100 µA, IE = 0 V(BR.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BCP52-10T |
nexperia |
1A PNP medium power transistors |
|
| 2 | BCP52-16 |
NXP |
PNP medium power transistors |
|
| 3 | BCP52-16 |
Infineon Technologies AG |
PNP Silicon AF Transistors |
|
| 4 | BCP52-16 |
ST Microelectronics |
LOW POWER PNP TRANSISTOR |
|
| 5 | BCP52-16T |
nexperia |
1A PNP medium power transistors |
|
| 6 | BCP52 |
nexperia |
1A PNP medium power transistors |
|
| 7 | BCP52 |
STMicroelectronics |
MEDIUM POWER AMPLIFIER |
|
| 8 | BCP52 |
Fairchild Semiconductor |
PNP General Purpose Amplifier |
|
| 9 | BCP52 |
NXP |
PNP medium power transistors |
|
| 10 | BCP52 |
Infineon Technologies AG |
PNP Silicon AF Transistors |
|
| 11 | BCP52 |
NXP Semiconductors |
60V 1A PNP medium power transistors |
|
| 12 | BCP52 |
Diodes |
PNP MEDIUM POWER TRANSISTORS |
|