BCP49 - Infineon

BCP49 NPN Silicon Darlington Transistors

NPN Silicon Darlington Transistors • For general AF applications • High collector current • High current gain • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BCP49 4 3 2 1 C(2,4) B(1) E(3) EHA00009 Type BCP49 Marking Pin Configuration Package BCP 49 1 = B 2 = C 3 = E 4 = C SOT223 Maximum Ratings Parameter Collector-emitter vo.

Features

ameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 60 V, IE = 0 Collector cutoff current VCB = 60 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 5 V, IC = 0 DC current gain 1) IC = 100 µA, VCE = 1 V DC current gain 1) IC = 10 mA, VCE = 5 V DC current gain 1) IC = 100 mA, VCE = 5 V DC current gain 1) IC = 500 mA, VCE = 5 V V(BR)CEO 60 - V(BR)CBO 80 - V(BR)EBO 10 - ICBO - - ICBO .