BCP28 - Infineon

BCP28 PNP Silicon Darlington Transistors

PNP Silicon Darlington Transistors
For general AF applications
High collector current
High current gain
Complementary types: BCP29/49 (NPN) B(1) BCP28, BCP48 4 C(2,4) 3 2 1 VPS05163 Type BCP28 BCP48 Marking BCP 28 BCP 48 1=B 1=B E(3) EHA00008 Pin Configuration 2=C 3=E 4=C 2=C 3=E 4=C Package SOT223 SOT223 Maximum Ratings Parameter Collect.

Features

nit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 BCP28 30 - BCP48 60 - V - Collector-base breakdown voltage V(BR)CBO IC = 100 µA, IB = 0 BCP28 40 - - BCP48 80 - - Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 VCB = 60 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C VCB = 60 V, IE = 0 , TA = 150 °C BCP28 BCP48 BCP28 BCP48 V(BR)EBO 10 ICBO - ICBO - - - nA - 100 - 100 µA - 10 - 10 Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) .