BC846 ... BC850 BC846 ... BC850 SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 100 mA hFE = 180/290/520 Tjmax = 150°C VCEO = 30...65 V Ptot = 250 mW Version 2015-10-30 ~ SOT-23 (TO-236) 2.9 ±0.1 0.4+0.1 -0.05 3 Type Code 1 1.9±0.1 2 1.1+0.1 -0.2 2.4 ±0.2 1.3±0.1 ELV Typical Applications Signal processing, Switching, Am.
General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar Drei Stromverstärkungsklassen RoHS Pb Konform zu RoHS, REACH, Konfliktmineralien 1 WEEE Mechanische Daten 1) 3000 / 7“ Gegurtet auf Rolle 1=B 2=E 3=C Dimensions - Maße [mm] Weight approx. Case material Solder & assembly conditions 0.01 g UL 94V-0 260°C/10s Gewicht ca. Gehäusematerial Löt- und Einbaubedingungen MSL = 1 Maxim.
SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,。 Low current, Low voltage. / Appli.
BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor August 2015 BC846 / BC847 / BC848 / BC850 NPN Epitaxi.
UNISONIC TECHNOLOGIES CO., LTD BC846-BC850 NPN SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATION FEATURES * S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BC850 |
Kexin |
NPN Transistors | |
2 | BC850 |
LGE |
Transistor | |
3 | BC850 |
NXP |
NPN general purpose transistors | |
4 | BC850 |
Fairchild Semiconductor |
NPN EPITAXIAL SILICON TRANSISTOR | |
5 | BC850 |
Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors | |
6 | BC850 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
7 | BC850 |
UTC |
NPN SILICON TRANSISTOR | |
8 | BC850 |
Pan Jit International |
NPN GENERAL PURPOSE TRANSISTORS | |
9 | BC850 |
SEMTECH |
NPN Silicon Epitaxial Transistor | |
10 | BC850 |
ON Semiconductor |
NPN Transistor | |
11 | BC850-AU |
PAN JIT |
NPN GENERAL PURPOSE TRANSISTORS | |
12 | BC850ALT1 |
Motorola |
General Purpose Transistors |