MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC817–16LT1/D General Purpose Transistors NPN Silicon 2 BASE 1 EMITTER Symbol VCEO VCBO VEBO IC Value 45 50 5.0 500 Unit V V V mAdc COLLECTOR 3 BC817-16LT1 BC817-25LT1 BC817-40LT1 3 1 2 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collecto.
x Unit
OFF CHARACTERISTICS
Collector
– Emitter Breakdown Voltage (IC =
–10 mA) Collector
– Emitter Breakdown Voltage (VEB = 0, IC =
–10 µA) Emitter
– Base Breakdown Voltage (IE =
–1.0 mA) Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150°C) 1. FR
–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V(BR)CEO V(BR)CES V(BR)EBO ICBO — — — — 100 5.0 nA µA 45 50 5.0 — — — — — — V V V
Thermal Clad is a registered trademark of the Bergquist Company.
Motorola Small
–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996
1
BC817-16LT1 BC817-25LT1 BC8.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC817–16LT1/D General Purpose Transistors NPN Silicon 1 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BC817-40L |
ON Semiconductor |
NPN Silicon Transistors | |
2 | BC817-40 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
3 | BC817-40 |
NXP |
NPN general purpose transistor | |
4 | BC817-40 |
Diodes Incorporated |
45V NPN SMALL SIGNAL TRANSISTOR | |
5 | BC817-40 |
Micro Commercial Components |
NPN Small Signal Transistor | |
6 | BC817-40 |
Infineon Technologies AG |
NPN Silicon AF Transistors | |
7 | BC817-40 |
TAITRON |
SMD General Purpose Transistor | |
8 | BC817-40 |
Diotec |
SMD General Purpose NPN Transistors | |
9 | BC817-40 |
SeCoS |
NPN Plastic Encapsulate Transistors | |
10 | BC817-40 |
Taiwan Semiconductor |
NPN Small Signal Transistor | |
11 | BC817-40 |
STMicroelectronics |
SMALL SIGNAL NPN TRANSISTORS | |
12 | BC817-40 |
RECTRON |
NPN Transistor |