BC817-40-G - Comchip

BC817-40-G General Purpose Transistors

General Purpose Transistors BC817-16-G/25-G/40-G (NPN) RoHS Device Features - For general AF applications. - High collector current. - High current gain. - Low collector-emitter saturation voltage. Marking: BC817-16-G: 6A BC817-25-G: 6B BC817-40-G: 6C Diagram: Collector 3 1 Base 2 Emitter SOT-23 0.056(1.40) 0.047(1.20) 0.119(3.00) 0.110(2.80) 3 12 0.079(.

Features

- For general AF applications. - High collector current. - High current gain. - Low collector-emitter saturation voltage. Marking: BC817-16-G: 6A BC817-25-G: 6B BC817-40-G: 6C Diagram: Collector 3 1 Base 2 Emitter SOT-23 0.056(1.40) 0.047(1.20) 0.119(3.00) 0.110(2.80) 3 12 0.079(2.00) 0.071(1.80) 0.045(1.15) 0.035(0.90) 0.006(0.15) 0.003(0.08) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) 0.004(0.10) max 0.020(0.50) 0.012(0.30) Dimensions in inches and (millimeter) Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Symbol Collector-Base voltage Collector-Emitter voltag.