SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation at Ta=25ºC Derate Above 25ºC Total Device Dissipation at Ta=25ºC Total Device Dissipation at Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range VCEO VCBO VEBO IC PD **PD PD Tj, Tstg THERMAL RESISTANCE .
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Elektronische Bauelemente BC636/638/640 PNP Type Plastic Encapsulate Transistors FEATURE Power Dissipation: PCM: 0.83 .
PNP medium power transistor in a TO-92; SOT54 plastic package. NP complements: BC635, BC637 and BC639. 1 handbook, halfp.
PNP Silicon AF Transistors High current gain q High collector current q Low collector-emitter saturation voltage q Compl.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC636/D High Current Transistors PNP Silicon COLLECTOR 2.
98AON13879G Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed .
BC636 — PNP Epitaxial Silicon Transistor October 2015 BC636 PNP Epitaxial Silicon Transistor Features • Switching and.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BC635 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistor | |
2 | BC635 |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS | |
3 | BC635 |
Motorola Inc |
High Current Transistors | |
4 | BC635 |
NXP |
NPN medium power transistors | |
5 | BC635 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors | |
6 | BC635 |
Fairchild Semiconductor |
NPN EPITAXIAL SILICON TRANSISTOR | |
7 | BC635 |
Micro Electronics |
COMPLEMENTARY SILICON TRANSISTORS | |
8 | BC635 |
ON Semiconductor |
High Current Transistors | |
9 | BC635 |
SeCoS |
NPN Type Plastic Encapsulate Transistors | |
10 | BC636-16 |
ON Semiconductor |
High Current Transistors | |
11 | BC636TA |
Fairchild Semiconductor |
PNP EPITAXIAL SILICON TRANSISTOR | |
12 | BC637 |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |