BC516 PNP Silicon Darlington Transistor Datasheet

BC516 PNP Silicon Darlington Transistor

PNP Silicon Darlington Transistor q High current gain q High collector current q Complementary type: BC 517 (NPN) BC 516 2 3 1 Type BC 516 Marking – Ordering Code Q62702-C944 Pin Configuration 123 CBE Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current.

Features

base breakdown voltage IC = 100 µA Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 ˚C Emitter cutoff current VEB = 4 V DC current gain IC = 20 mA; VCE = 2 V Collector-emitter saturation voltage1) IC = 100 mA; IB = 0.1 mA Base-emitter voltage1) IC = 10 mA; VCE = 5 V AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Output capacitance VCB = 10 V, f = 1 MHz Symbol Values Unit min. typ. max. V(BR)CE0 30
  – V(BR)CB0 40
  – V(BR)EB0 10
  – ICB0
  –
  –
  –
  – IEB0
  –
  – hFE 30 000
  – VCEsat
  –
  – VBE
  –
  –
  –V
  –
  – 100 nA 10 µA 100.

The same part from a different manufacturer

BC516 - Micro Electronics

BC516 - Fairchild Semiconductor

BC516 BC516 PNP Darlington Transistor • This device is designed for applications reguiring extremely high current gain.

BC516 - NXP

PNP Darlington transistor in a TO-92; SOT54 plastic package. NPN complement: BC517. PINNING PIN 1 2 3 emitter base col.

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BC516 - Siemens Semiconductor Group