BC490 - ON Semiconductor

BC490 High Current Transistors

BC490 High Current Transistors PNP Silicon Features • This is a Pb−Free Device* MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC PD Value −80 −80 −4.0 −1.0 625 5.0 Unit Vdc Vdc Vdc Adc mW mW/°C .

Features

• This is a Pb−Free Device
* MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC PD Value −80 −80 −4.0 −1.0 625 5.0 Unit Vdc Vdc Vdc Adc mW mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junc.