BC489, BC489A High Current Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Collector −Emitter Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°.
• These are Pb−Free Devices
*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage Collector −Base Voltage Collector −Emitter Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Junction Temperature Range
VCEO VCBO VEBO
IC PD
80 Vdc
80 Vdc
5.0 Vdc
0.5 Adc
625 mW 5.0 mW/°C
PD 1.5 W 12 mW/°C
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200 °C/W
Thermal Resistance.
SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissip.
BC485 BC487 BC489 CASE 29-02, STYLE 17 TO-92 (TO-226AA) HIGH CURRENT TRANSISTORS NPN SILICON Refer to MPSA05 for graphs..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BC485 |
Micro Electronics |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR | |
2 | BC485 |
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS | |
3 | BC485 |
Motorola |
HIGH CURRENT TRANSISTORS | |
4 | BC485A |
Motorola |
HIGH CURRENT TRANSISTORS | |
5 | BC485A |
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS | |
6 | BC485B |
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS | |
7 | BC485B |
Motorola |
HIGH CURRENT TRANSISTORS | |
8 | BC485L |
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS | |
9 | BC485L |
Motorola |
HIGH CURRENT TRANSISTORS | |
10 | BC486 |
Micro Electronics |
PNP SILICON PLANAR EPITAXIAL TRANSISTOR | |
11 | BC486 |
Motorola |
HIGH CURRENT TRANSISTORS | |
12 | BC486A |
Motorola |
HIGH CURRENT TRANSISTORS |