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BC487, BC487B High Current Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 60 Vdc 60 Vdc 5.0 Vdc 0.5 .
• Pb−Free Packages are Available
*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO VCBO VEBO
IC PD
60
Vdc
60
Vdc
5.0
Vdc
0.5
Adc
625
mW
5.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
W
12
mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg − 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation.
BC487 - Motorola
BC485 BC487 BC489 CASE 29-02, STYLE 17 TO-92 (TO-226AA) HIGH CURRENT TRANSISTORS NPN SILICON Refer to MPSA05 for graphs..
BC487 - CDIL
SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissip.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BC485 |
Micro Electronics |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
|
| 2 | BC485 |
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 3 | BC485 |
Motorola |
HIGH CURRENT TRANSISTORS |
|
| 4 | BC485A |
Motorola |
HIGH CURRENT TRANSISTORS |
|
| 5 | BC485A |
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 6 | BC485B |
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 7 | BC485B |
Motorola |
HIGH CURRENT TRANSISTORS |
|
| 8 | BC485L |
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 9 | BC485L |
Motorola |
HIGH CURRENT TRANSISTORS |
|
| 10 | BC486 |
Micro Electronics |
PNP SILICON PLANAR EPITAXIAL TRANSISTOR |
|
| 11 | BC486 |
Motorola |
HIGH CURRENT TRANSISTORS |
|
| 12 | BC486A |
Motorola |
HIGH CURRENT TRANSISTORS |
|
