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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC350 FEATURES Power dissipation PCM : 0.3 W£¨ Tamb=25¡æ£© www.DataSheet4U.com Collector current ICM: -0.1 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ unle.
Power dissipation PCM : 0.3 W£¨ Tamb=25¡æ£© www.DataSheet4U.com Collector current ICM: -0.1 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ unless TRANSISTOR (PNP) TO¡ª 92 1.EMITTER 2. BASE 3. COLLECTOR 1 2 3 otherwise specified£© Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BC351 |
Micro Electronics |
PNP SILICON TRANSISTOR |
|
| 2 | BC352239A |
Cambridge Silicon Radio |
Single Chip Bluetooth |
|
| 3 | BC354 |
Tesla Elektronicke |
Transistor |
|
| 4 | BC355 |
Tesla Elektronicke |
Transistor |
|
| 5 | BC300 |
CDIL |
(BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
|
| 6 | BC300 |
Micro Electronics |
NPN Silicon Transistor |
|
| 7 | BC301 |
CDIL |
(BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
|
| 8 | BC301 |
Micro Electronics |
NPN Silicon Transistor |
|
| 9 | BC302 |
CDIL |
(BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
|
| 10 | BC302 |
Seme LAB |
Bipolar NPN Device |
|
| 11 | BC302 |
Micro Electronics |
NPN Silicon Transistor |
|
| 12 | BC303 |
Micro Electronics |
PNP Silicon Transistor |
|