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SYMBOL Collector -Emitter Voltage Collector -Emitter Voltage Emitter -Base Voltage Collector Current Continuous Peak Emitter Current Peak Base Current Continuous Base Current Peak Power Dissipation@ Ta=25 deg C Derate Above 25 deg C Operating & Storage Junction Temperature Range THERMAL RESISTANCE From Junction to Ambient in Free Air VCE0 VCES VEBO IC ICM IE.
CAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION BC327 BC337 VCEO IC=10mA,IB=0 >45 Collector -Emitter Voltage VCES IC=100uA.IE=0 >50 VEBO IE=10uA, IC=0 Emitter-Base Voltage ICBO VCB=20V, IE=0 Collector-Cut off Current VCB=20V, IE=0, TJ=150deg C IEBO VEB=5V, IC=0 Emitter Cut off Current hFE
* IC=500mA,VCE=1V DC Current Gain . IC=100mA,VCE=1V 100-600 63-160 Group-10 100-250 Group-16 160-400 Group-25 250-600 Group-40 VCE(Sat)
* IC=500mA,IB=50mA Collector Emitter Saturation Voltage VBE(on)
* IC=500mA,VCE=1V Base Emitter on Voltage DYNAMIC CHARACTERISTIC.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BC337 |
INCHANGE |
NPN Transistor |
|
| 2 | BC337 |
Motorola Inc |
Amplifier Transistor |
|
| 3 | BC337 |
ON Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 4 | BC337 |
NXP |
500mA NPN general-purpose transistors |
|
| 5 | BC337 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 6 | BC337 |
SeCoS |
NPN Plastic-Encapsulate Transistors |
|
| 7 | BC337 |
LGE |
TO-92 Bipolar Transistors |
|
| 8 | BC337 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 9 | BC337 |
UTC |
NPN SILICON TRANSISTOR |
|
| 10 | BC337 |
Multicomp |
Transistor |
|
| 11 | BC337 |
Kexin |
NPN Transistors |
|
| 12 | BC337 |
Central Semiconductor |
SILICON NPN TRANSISTORS |
|