BC328-40 PNP Silicon AF Transistors Datasheet

BC328-40 PNP Silicon AF Transistors

BC 327 / BC 328 PNP Si-Epitaxial PlanarTransistors General Purpose Transistors PNP 625 mW TO-92 (10D3) 0.18 g Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard Pinning 1=C 2=B 3=E Standard packaging taped in ammo pack S.

Features

16 - VCE = 1 V, - IC = 100 mA Group -25 Group -40 Group -16 - VCE = 1 V, - IC = 300 mA Group -25 Group -40 hFE hFE hFE hFE hFE hFE 100 160 250 60 100 170 Kennwerte, Tj = 25/C Typ. 160 250 400 130 200 320 Max. 250 400 630
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  – 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 2 01.11.2003 General Purpose Transistors Characteristics (Tj = 25/C) Min. Collector-Emitter cutoff current
  – Kollektorreststrom - VCE = 45 V - VCE = 25 V - VCE = 45 V, Tj = 125/C - VCE .

The same part from a different manufacturer

BC328-40 - Diotec Semiconductor

PNP Silicon AF Transistors BC 327 BC 328 High current gain q High collector current q Low collector-emitter saturation.

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BC328-40 - Siemens Semiconductor Group