BC317B - CDIL

BC317B NPN Silicon Transistor

Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 45 50 6.0 150 350 2.8 1.0 8.0 - 55 to +150 THERMAL CHARACTERISTICS Junction to Ca.

Features

er Cut off Current IEBO VEB=4V, IC = 0 Base Emitter On Voltage VBE (on) IC=2mA, VCE=5V Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain VCE (sat) VBE (sat) hFE IC=10mA, VCE=5V IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10µA, VCE=5V BC317A BC317B IC=2mA, VCE=5V BC317 BC317A BC317B MIN 45 50 50 6.0 0.57 40 110 110 200 TYP 0.70 0.85 90 MAX 30 15 0.72 0.77 0.60 450 220 450 BC317_A_B_Rev220103E UNITS V V V mA mW mW/ºC W mW/ºC ºC ºC/W ºC/W UNITS V V V V nA nA V V V V V Continental Device India Limited Data Sheet Page 1 of 5 NPN SIL.