SYMBOL BC307 BC308 BC309 Collector Emitter Voltage Collector Base Voltage VCEO VCBO 45 25 25 50 30 30 Emitter Base Voltage Collector Current Continuous Power Dissipation@ Ta=25ºC VEBO IC PD 555 100 350 Derate Above 25ºC 2.8 Power Dissipation@ Tc=25ºC PD 1 Derate Above 25ºC 8 Operating And Storage Junction Tj, Tstg -55 to +150 Temperature R.
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BC308 |
Fairchild Semiconductor |
PNP EPITAXIAL SILICON TRANSISTOR | |
2 | BC308 |
New Jersey Semi-Conductor |
PNP SILICON PLANAR EPITAXIAL TRANSISTOR | |
3 | BC308 |
SEMTECH |
PNP Silicon Epitaxial Planar Transistor | |
4 | BC308 |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS | |
5 | BC308 |
Motorola |
AMPLIFIER TRANSISTORS | |
6 | BC308 |
Micro Electronics |
(BC3xx) Transistors | |
7 | BC308 |
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR | |
8 | BC308A |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS | |
9 | BC308C |
Motorola Inc |
Amplifier Transistors | |
10 | BC308C |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS | |
11 | BC300 |
CDIL |
(BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS | |
12 | BC300 |
Micro Electronics |
NPN Silicon Transistor |