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BAV70W - NXP

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BAV70W High-speed switching diodes

High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NXP JEITA BAV70 SOT23 - BAV70M SOT883 SC-101 BAV70S SOT363 SC-88 BAV70T BAV70W SOT416 SOT323 SC-75 SC-70 JEDEC Package configuration TO-236AB small - leadless ultra small - very small - ultra small.

Features


 High switching speed: trr  4 ns
 Low leakage current
 Small SMD plastic packages
 Low capacitance: Cd  1.5 pF
 Reverse voltage: VR  100 V
 AEC-Q101 qualified 1.3 Applications
 High-speed switching
 General-purpose switching 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Per diode IR reverse current VR reverse voltage trr reverse recovery time Conditions VR = 80 V Min Typ [1] - - [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. Max 0.5 100 4 Unit A V ns NXP Semiconductors BAV70 series High-speed switching diod.

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Datasheet BAV70W - RECTRON BAV70W

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