Dual common cathode low-leakage diode encapsulated in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • High switching speed: trr = 0.8 µs • Low leakage current: IR = 3 pA • Repetitive peak reverse voltage VRRM ≤ 85 V • Low capacitance Cd = 2 pF • Ultra .
• High switching speed: trr = 0.8 µs
• Low leakage current: IR = 3 pA
• Repetitive peak reverse voltage VRRM ≤ 85 V
• Low capacitance Cd = 2 pF
• Ultra small SMD plastic package
• Low package height of 0.37 mm
• Suitable for Automatic Optical Inspection (AOI) of solder joint
• AEC-Q101 qualified
3. Applications
• Low-leakage current applications
• General-purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per diode
IF forward current
VR reverse voltage
Per diode
IR reverse current
trr reverse recovery time
Conditions
Tamb = 25 °C; single diode.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BAV170 |
NXP |
Low-leakage double diode | |
2 | BAV170 |
Infineon Technologies AG |
Silicon Low Leakage Diode Array | |
3 | BAV170 |
TIPTEK |
SURFACE MOUNT SWITCHING DIODES | |
4 | BAV170 |
nexperia |
Low-leakage double diode | |
5 | BAV170 |
Pan Jit International |
LOW LEAKAGE SWITCHING DIODES | |
6 | BAV170 |
MCC |
Low Leakage Diode | |
7 | BAV170 |
Kexin |
Switching Diodes | |
8 | BAV170 |
TAITRON |
Three Terminals SMD Low Leakage Switching Diode | |
9 | BAV170 |
WON-TOP |
SURFACE MOUNT FAST SWITCHING DIODE | |
10 | BAV170-AU |
Pan Jit International |
(BAV170-AU / BAV199-AU) LOW LEAKAGE SWITCHING DIODES | |
11 | BAV170-Q |
nexperia |
Low-leakage double diode | |
12 | BAV170HMFH |
ROHM |
Switching Diode |