BAT854W - Guangdong Kexin Industrial

BAT854W Schottky barrier (double) diodes

SMD Type Schottky barrier (double) diodes BAT854W;BAT854AW BAT854CW;BAT854SW w w w . D a t a S h e Diodes Features Very low forward voltage Very low reverse current Guard ring protected Very small SMD package. Absolute Maximum Ratings Ta = 25 Parameter Continuous reverse voltage Continuous forward current Repetitive peak forward current Non-repetitive pe.

Features

Very low forward voltage Very low reverse current Guard ring protected Very small SMD package. Absolute Maximum Ratings Ta = 25 Parameter Continuous reverse voltage Continuous forward current Repetitive peak forward current Non-repetitive peak forward current Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient Symbol VR IF IFRM IFSM Tstg Tj Tamb Rth j-a -65 tp 1 s; d 0.5 Conditions Min Max 40 200 300 1 -65 +150 150 +150 625 K/W Unit V mA mA A t = 8.3 ms half sinewave;JEDEC method Electrical Characteristics Ta = 25 Parameter Symb.