BAT760 - NXP

BAT760 Medium power Schottky barrier single diode

Planar medium power Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small Surface-Mounted Device SMD plastic package. 1.2 Features I Ultra high-speed switching I Very low forward voltage I Guard-ring protected I Very small SMD plastic package 1.3 Applications I Ultra high-speed switch.

Features

I Ultra high-speed switching I Very low forward voltage I Guard-ring protected I Very small SMD plastic package 1.3 Applications I Ultra high-speed switching I Voltage clamping I Protection circuits 1.4 Quick reference data Table 1. Symbol VR IF VF Quick reference data Parameter reverse voltage forward current forward voltage [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Conditions IF = 1 A Min Typ Max Unit - - 20 V - - 1A [1] - 480 550 mV NXP Semiconductors BAT760 Medium power Schottky barrier single diode 2. Pinning information Table 2. Pin 1 2 Pinning Description cathode anode [1] The.