BAT66-05 - Infineon Technologies AG

BAT66-05 Silicon Schottky Diode

BAT66... Silicon Schottky Diode
Power rectifier diode
For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purpose BAT66-05 4 D 1 D 2 1 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT66-05 Parameter Package SOT223 Configuration common cathode Symbol VR IF IFSM IFAV Pt.

Features

C Characteristics Reverse current VR = 25 V VR = 25 V, TA = 85 °C Forward voltage I F = 10 mA I F = 100 mA IF = 1 A VF 0.28 0.35 0.47 0.35 0.6 IR 10 1000 V Unit µA AC Characteristics Diode capacitance VR = 10 V, f = 1 MHz CT - 30 40 pF 2 Feb-14-2003 BAT66... Reverse current IR = (VR) TA = Parameter 10 4 BAT 66-05 EHB00063 Forward current IF =  (VF) 10 3 BAT 66-05 EHB00062 ΙR µA 10 3 TA = 125 ˚C ΙR mA 10 2 10 2 85 ˚C 10 1 10 1 10 0 TA = 25 ˚C 85 ˚C 10 0 25 ˚C 10 -1 0 10 20 V 30 10 -1 0 0.25 0.5 V 0.75 VR VF Forward current IF =  (TS ) 2400 mA 1600 IF 1200.